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GCS offers a total of six
(6) power processes (P1, P2, P3, P5, P6, and P7) for handset wireless, WLAN,
mobile WiMAX and infrastructure markets.
Our P1 and P2 processes are
designed to achieve high ruggedness and superior linearity at the same
time. The P5 process features unbreakable ruggedness and high power
efficiency at the same time was designed for GSM/EDGE power amplifier
application. Several customers (including IDMs) have reported excellent
VSWR >15:1 with 5V Vcc bias.
GCS also offers two digital processes (D1 and D5), providing high fT, very low
phase noise, integrated varactor and Schottky diodes,
ideal for applications such as VCO, tunable filters, and high speed ICs.
| Parameter |
Unit |
P1 |
P2 |
P3 |
P5 |
P6 |
P7 |
D1 (High fT) |
D5 |
| Applications |
|
CDMA, WLAN, Linear Gain Block |
CDMA, WLAN, WiMAX, Linear Gain Block |
CDMA,
WiFi,
802.11AC, WiMAX, Linear Gain Block |
GSM, Driver Amp |
Hi BV DriverAmp for Base Station, CATV150 |
12V PA, Infrastructure, Base Station PA |
VCO, High-speed Digital and Mixed-signal ICs |
Wide Tuning Range VCO, Voltage Tunable MMIC Filters |
| Current Gain |
|
120 |
70 |
70 |
70 |
70 |
70 |
150 |
150 |
| BVceo@ KA/cm2 |
V |
12.5 |
13.5 |
19 |
18.5 |
23 |
28 |
7.5 |
6.5 |
| BVcbo@ KA/cm2 |
V |
23 |
23 |
33 |
33 |
45 |
55 |
17 |
29 |
| fT/fmax |
GHz |
45/55 |
40/58 |
40/87 |
32/60 |
30/65 |
20/70 |
60/65 |
42/55 |
| Schottky Diode |
|
Yes |
Yes |
Yes |
Yes |
Yes |
Yes |
Yes |
Yes |
| Performance Example |
|
Pout=28dBm, PAE=65%, G=20dB, Vcc=3.5V, Freq=2.0GHz, DUT=1700um2 |
Pout=28dBm, PAE=65%, G=20dB, Vcc=3.5V, Freq=2.0GHz, DUT=1700um2 |
Pout=21dBm, PAE=71%, G=24dB, Vcc=3.5V, Freq=2.0GHz, DUT=576um2 |
Pout=36dBm, PAE=70%, G=18dB, Vcc=3.6V, Freq=0.9GHz, DUT=6900um2 |
Pout=33dBm, PAE=70%, G=21dB, Vcc=10V, Freq=2.0GHz, DUT=1700um2 |
Pout=30dBm, Vcc=12V, DUT=1920um2 |
VCO, fo=4.990 to 5.154GHz, Po=9.5Bm, PN= 105dBc/Hz @100KHz offset |
VCO, PN= 105dBc/Hz @100KHz offset,
C/V Tuning Ratio = 5:1
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